EE213 Lab2 hspice simulation Static Device Characteristics

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0 前言

1 仿真目标

2 IDS-VDS

3 IDS-VGS

4 VTH

5 IDS-VGS(log)

6 Body bias(Ids-Vbs)

7 Body bias(Vth-Vbs)

8 Ids-Temperature

0 前言

记录一下来到skd上的强度比较大的一门课，数字集成电路2的lab设计还是蛮好的，该帖非详细教程只是单纯的写一些思虑并用作笔记，新手小白欢迎交流，有错勿喷！

1 仿真目标

主要仿真45nm MOS管的静态参数

2 IDS-VDS

2.1 simulation code

* 45nm NMOS Simulation  
.options brief post probe.temp 25
.INCLUDE 'NMOS_VTL.inc'
.param Vdd=1.1vVgs nG 0 DC 1V
Vds nD 0 DC 1VM0 nD nG 0 0 NMOS_VTL L=50e-9 W=90e-9.dc Vds 0 1.1 0.01 Vgs 0.1 0.9 0.2.probe I(M0)
.print I(M0).end

2.2 simulation wave

3 IDS-VGS

3.1 simulation code

* 45nm NMOS Simulation  
.options brief post probe.temp 25
.INCLUDE 'NMOS_VTL.inc'
.param Vdd=1.1vVgs nG 0 DC 1V
Vds nD 0 DC VddM0 nD nG 0 0 NMOS_VTL L=50e-9 W=90e-9.dc Vgs 0 Vdd 0.01.probe I(M0)
.print I(M0).end

3.2 simulation wave

4 VTH

4.1 simulation code

* 45nm NMOS Simulation  
.options brief post probe.temp 25
.INCLUDE 'NMOS_VTL.inc'
.param Vdd=1.1vVgs nG 0 DC 1V
Vds nD 0 DC VddM0 nD nG 0 0 NMOS_VTL L=50e-9 W=90e-9.dc Vgs 0 Vdd 0.01.probe I(M0) vth(M0)
.print I(M0) vth(M0).end

4.2 simulation wave

5 IDS-VGS(log)

5.1 simulation code

* 45nm NMOS Simulation  
.options brief post probe.temp 25
.INCLUDE 'NMOS_VTL.inc'
.param Vdd=1.1vVgs nG 0 DC 1V
Vds nD 0 DC 0.1M0 nD nG 0 0 NMOS_VTL L=50e-9 W=90e-9.dc Vgs -Vdd Vdd 0.01 Vds 0.1 1.1 1.probe I(M0)
.print I(M0).end

5.2 simulation wave

6 Body bias(Ids-Vbs)

6.1 simulation code

* 45nm NMOS Simulation  
.options brief post probe.temp 25
.INCLUDE 'NMOS_VTL.inc'
.param Vdd=1.1vVgs nG 0 DC 1V
Vds nD 0 DC Vdd
Vbulk nB 0 DC 1VM0 nD nG 0 nB NMOS_VTL L=50e-9 W=90e-9.dc Vgs 0 Vdd 0.01 Vbulk -1.1 0 0.1 .probe I(M0)
.print I(M0).end

6.2 simulation wave

7 Body bias(Vth-Vbs)

7.1 simulation code

* 45nm NMOS Simulation  
.options brief post probe.temp 25
.INCLUDE 'NMOS_VTL.inc'
.param Vdd=1.1vVgs nG 0 DC 1V
Vds nD 0 DC Vdd
Vbulk nB 0 DC 1VM0 nD nG 0 nB NMOS_VTL L=50e-9 W=90e-9.dc Vgs 0 Vdd 0.01 Vbulk -1.1 0 0.1 .probe I(M0) vth(M0)
.print I(M0) vth(M0).end

7.2 simulation wave

8 Ids-Temperature

8.1 simulation code

* 45nm NMOS Simulation  
.options brief post probe.INCLUDE 'NMOS_VTL.inc'
.param Vdd=1.1vVgs nG 0 DC 0.5
Vds nD 0 DC VddM0 nD nG 0 0 NMOS_VTL L=50e-9 W=90e-9.dc  TEMP 0 100 1 Vgs 0.1 0.5 0.4.probe I(M0)
.print I(M0).end